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Postdoctoral
Associate, Applied Physics &
Visiting
Scientist at IBM T.J. Watson Lab
Silcox
Research Group
F-7 Clark Hall, AEP, Cornell University,
Ithaca, NY 14853
Tel: 607-255-0649
kam55@cornell.edu
M.S.
2003; Ph.D. 2004 Applied Physics,
Cornell University |
Biography
I was born
on October 23, 1974 in Yerevan, Armenia. In
1991 I
graduated, with honors, from Physics and Math oriented high school and
joined Yerevan
State University.
There I
received a B.S. (1994) and M.S., with honors, in Physics (1996). Since
Feb. 1998 I was a researcher at
Bell Labs, Lucent
Technologies.
I joined
Prof. John Silcox’s group
as a graduate student of
Applied and
Engineering Physics at Cornell
University in fall 1999. I
received M.S. in May 2003 and Ph.D. in
January 2004, both in Applied Physics. Now I am Postdoctoral
Associate at Cornell & Visiting
Scientist at IBM T.J.
Watson Lab.
Research
Interests
It
is a determination of electronic-structure features
on an atomic
scale which gives critical insight into the properties of materials in
various applications. The questions that can get their answers include
the growth of thin-film structures, bonding at interfaces in metals and
meta/ceramic hetero-interfaces and the strain and atomic distributions
in quantum wells and wires. The drive to device scales in the nanoscale
regime in the semiconductor manufacturing industry is making increasing
use of the
approach being exploited here.
The
research is based on Scanning Transmission Electron
Microscope (UHV-STEM),
an instrument that provides a 100 keV-electron beam focussed to spot
sizes as small as 0.2nm-i.e., close to the spacing between atoms. This
provides atomic precision maps of the electron scattering in the sample
(typically given by the atomic structure). This, in turn, allows
location of the electron beam on the atomic scale to achieve electron
spectroscopy on the nanoscale (e.g., 0.2 to 0.5 nm). The electron
spectroscopy can
achieve 0.7 eV energy resolution over an energy range from 0 to 2 keV
and has a demonstrated value in a wide range of problem areas. Accurate
simulation of the propagation of the electron beam through the
thin-film sample is critical to accurate interpretation of the
observations. Data
is acquired digitally and is therefore directly available for
quantitative
analysis.
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