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PUBLICATION LIST
Scientific
- K.A.
Mkhoyan,
E.J.
Kirkland, J. Silcox and E.S. Alldredge, Atomic-level
characterization of GaN/AlN quantum wells, J. Appl. Phys. 96,
738 (2004).
- K.A. Mkhoyan, J. Silcox, Z. Yu, W.J.
Schaff
and L.F. Eastman, Formation
of
the quasi-two-dimensional electron gas in GaN/AlGaN
heterostructures with
diffuse interfaces, J. Appl. Phys. 95, 1843 (2004).
- K.A. Mkhoyan, J. Silcox, H. Wu, W.J.
Schaff
and L.F. Eastman, Nonuniformities
in
GaN/AlN quantum wells, Appl. Phys. Lett. 83, 2668
(2003).
- K.A. Mkhoyan, J. Silcox, E.S.
Alldredge, N.W.
Ashcroft, H. Lu, W.J. Schaff and L.F. Eastman, Measuring
electronic structure of wurtzite InN using electron energy loss
spectroscopy, Appl. Phys. Lett. 82, 1407 (2003).
- K.A. Mkhoyan and J. Silcox, Electron-beam-induced
damage in wurtzite InN, Appl. Phys. Lett. 82, 859
(2003).
- H. Wu, W.J. Schaff, G.
Koley, M.
Furis, A.N. Cartwright, K.A. Mkhoyan, J. Silcox, W.
Henderson, W. A.
Doolittle and A.V. Osinsky, Molecular
Beam
Epitaxial Growth of AlN/GaN Multiple Quantum Wells, MRS
Proceeding, 743,
L6.2.1 (2002).
- K.A. Mkhoyan, E.S. Alldredge, J.
Silcox, N.W.
Ashcroft, Determination of the width of the GaN/AlGaN heterointerface
using
EELS, Proceeding Microscopy and Microanalysis 2001, 7, p.
216.
- M.M. Mkrtchyan, A.S.
Gasparyan, K.A. Mkhoyan, J.A. Liddle, and A.E. Novembre, Determination
of the possible magnitude of the charging effect in a SCALPEL mask
membrane, J. Vac. Sci. Technol. B 17(6),
pp.
2888-2892 (1999).
- M.M. Mkrtchyan, A.S.
Gasparyan, K.A.
Mkhoyan, J. A. Liddle, A. E. Novembre, D. A. Muller, SCALPEL
Mask-Membrane Charging, Microelectron. Eng. 46, 223 (1999).
- E.M. Kazaryan, K.A.
Mkhoyan,
H.A. Sarkisyan, Indirect
Transitions in Thin Films Due to Coulomb Interaction Between Electrons,
Thin
Solid Films 338 (1-2), 185 (1999).
- E.M. Kazaryan, K.A.
Mkhoyan, Indirect
Electron Transitions in Semiconductors Occurring as a Result of
Scattering of
Charge Carriers by Dislocations in a Quantizing Magnetic Field,
Semiconductor 32, 404 (1998).
- E.M. Kazaryan, K.A.
Mkhoyan,
H.A.Sarkisyan, Indirect
Transitions Caused by Electron-Dislocation Interaction in
Size-Quantized
Semiconductor Films, Thin Solid Films 302 (1-2),
54
(1997).
- A.S. Gasparyan, E.M.
Kazaryan, K.A. Mkhoyan, The Size Quantization of Charge
Carriers in
Semiconducting Microcrystals of Ellipsoidal Form, J.
Contempr. Phys. 34, 56 (1998).
- K.A. Mkhoyan, H.A. Sarkisyan,
Permittivity
Function of Size-Quantized Semiconducting Films, Uch.
Zapiski YGU
2, 39 (1996) (in Russia).
- A.A. Kirakosyan, K.A.
Kumashyan, K.A. Mkhoyan, H.A. Sarkisyan, Light
Absorption in
Semiconductors,
Containing Dislocations, in Indirect Interband Transitions, J.
Contempr.
Phys. 30, 14 (1995).
Non-Scientific
- K.
A. Mkhoyan, Reflection
of
an Armenian Student. How it can be done: The Armenian National
Scientific and
Educational Fund, Armenian Reporter Int., Vol. XXXV, Jan. 4,
p.7, 2003.
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